ZXM61P02F
Typical Characteristics
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
4 of 7
www.diodes.com
October 2013
? Diodes Incorporated
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相关代理商/技术参数
ZXM61P03 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03F 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:Diodes Incorporated 功能描述:P CHANNEL MOSFET, -30V, 1.1A SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
ZXM61P03F 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23
ZXM61P03F_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03FTA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM61P03FTA-CUT TAPE 制造商:DIODES 功能描述:ZXM61P03F 30 V 0.35 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23
ZXM61P03FTC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62N02E6 制造商:Diodes Incorporated 功能描述: 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6